Οι φήμες δίνουν και παίρνουν για το επερχόμενο Galaxy S8 της Samsung. Τα τελευταία νέα που έρχονται από την Κίνα αφορούν την μνήμη RAM that will be inside the device as well as the technology which will be used for this.
Until today, rumors wanted the upcoming Galaxy S8 to come with 6GB RAM and 256GB disk space.
However, a new fame coming from China supports the Galaxy S8 will be the world's first smartphone to feature 8GB RAM.
According to the Chinese leakster, Samsung will launch its own memory production in 8GB RAM using 10nm technology. He says that the 256GB internal memory will use UFS storage technology 2.1 flash storage technology.
UFS 2.1 flash storage technology will be an updated version of UFS 2.0, including key improvements over previous versions and providing security of data using inline cryptography between the system-on-chip (SoC) and the UFS storage device.
The Galaxy S8 is supposed to be among the first devices to use its processor Qualcomm Snapdragon 835, although rumors suggest that Qualcomm may not have the chipset ready until April.
It remains to be seen how many of the rumors will be verified at the end of February at MWC 2017.
