Rumors are swirling about Samsung's upcoming Galaxy S8. The latest news coming from China concerns the RAM memory that will be inside the device as well as the technology that will be used for this.
Until today, rumors wanted the upcoming Galaxy S8 to come with 6GB RAM and 256GB disk space.
However, a new fame coming from China supports the Galaxy S8 will be the world's first smartphone to feature 8GB RAM.
According to the Chinese leakster, Samsung will launch its own memory production in 8GB RAM using 10nm technology. He says that the 256GB internal memory will use UFS storage technology 2.1 flash storage technology.
UFS 2.1 flash storage technology will be an updated version of UFS 2.0, featuring key improvements over previous versions and providing better safety των δεδομένων με τη χρήση inline κρυπτογραφίας μεταξύ του system-on-chip (SoC) και της συσκευής αποθήκευσης UFS.
The Galaxy S8 is supposed to be among the first devices to use Qualcomm's processor Snapdragon 835, although rumor has it that Qualcomm might not have the chipset ready until April.
It remains to be seen how many of the rumors will be verified at the end of February at MWC 2017.
